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VHF-to-Microwave, +3V,
General-Purpose Amplifiers
ABSOLUTE MAXIMUM RATINGS
V CC to GND ................................................................-0.3V to 6V
Input Power.........................................................................5dBm
OUT Current .....................................................................±12mA
IN to GND Voltage ...................................................-1.2V to 1.2V
Bias to GND Voltage ....................................................0.0V to 3V
Voltage at SHDN Input
(MAX2631/MAX2633) ............................-0.3V to (V CC + 0.3V)
Current into SHDN Input (MAX2631/MAX2633).................100μA
Continuous Power Dissipation (T A = +70°C)
SOT143 (derate 4mW/°C above +70°C) .....................320mW
SOT23-5 (derate 7.1mW/°C above +70°C).................571mW
SOT23-6 (derate 7.1mW/°C above +70°C).................571mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
ELECTRICAL CHARACTERISTICS
(V CC = +3V, Z 0 = 50 Ω , f IN = 900MHz, R BIAS = 10k Ω (MAX2632/MAX2633), V SHDN = V CC (MAX2631/MAX2633), T A = +25°C, unless
otherwise noted.)
PARAMETERS
Operating Temperature Range
Supply Voltage
Power Gain
CONDITIONS
(Note 1)
T A = +25°C
T A = T MIN to T MAX (Note 1)
MIN
-40
2.7
11
9.4
TYP
13.4
MAX
85
5.5
16.5
18.4
UNITS
degrees
V
dB
Noise Figure
Output 1dB Compression Point
Output IP3
3.8
-11
-1
dB
dBm
dBm
Input Voltage Standing-Wave Ratio
Output Voltage Standing-Wave Ratio
f IN = 800MHz to 1000MHz
f IN = 800MHz to 1000MHz
1.3:1
1.25:1
R BIAS = 40k Ω
1.3
1.5
V CC = 3V, T A = +25°C
5.5
6.5
8.0
Supply Current
R BIAS =10k Ω V CC = 3V, T A = T MIN to T MAX (Note1)
V CC = 2.7V to 5.5V, T A = +25°C
4.2
5.2
6.5
6.5
9.2
11.0
mA
R BIAS = 500 Ω
15
17
Shutdown Supply Current
MAX2631/MAX2633
<0.1
1
μA
SHDN Input Low Voltage
SHDN Input High Voltage
MAX2631/MAX2633, V CC = 2.7V to 5.5V
MAX2631/MAX2633, V CC = 2.7V to 5.5V
2.0
0.45
V
V
SHDN Input Bias Current
MAX2631/
MAX2633
V SHDN = V CC
V SHDN = GND
30
1
μA
Note 1: Guaranteed by design and characterization.
2
_______________________________________________________________________________________
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